Growth systems
for materials used in the semiconductor industry
Custom-designed systems for crystal growth and high-temperature processes.
1 × 10⁻⁸ mbar
High vacuum
200 bar
Overpressure
2.500 °C
Temperature
Process conditions determine the outcome
The production of semiconductor materials in the form of bulk crystals places high demands on process control. During crystal growth, temperature, pressure, gas atmosphere, and mechanical movements must be maintained at constant levels over process times ranging from several hours to several days. Even slight deviations can affect crystal quality and the reproducibility of the process.
Technologies for Controlling Temperature, Atmosphere, and Process Stability
Crystal growth processes require specialized plant designs. Each plant is designed to accommodate the required temperature range, process atmosphere, pressure range, and necessary material properties.
Depending on the process, high vacuum, inert gas atmospheres, hydrogen, nitrogen, argon, or other process gases are used. The gas supply system is designed to meet the requirements for purity, safety, and process stability.
Key Technologies:
- High-Temperature Technology
- Pressure and Vacuum Technology
- Specialized Gas Flow and Gas Delivery Systems
What Makes Crystal Growth Systems Challenging
Process Stability
Temperature, pressure, and gas flow rates must be maintained at constant levels throughout the entire process.
High-Temperature Technology
Temperatures as high as 2,700 °C place high demands on design and material selection.
Process gases
Crystal growth processes often require high-purity, toxic, or flammable process gases.
Overpressure
Process plant systems operating under positive pressure must comply with the requirements of the applicable pressure equipment directives.
Crystal Growth Processes
Different processes are used depending on the application. We would be happy to advise you on which processes are best suited for your specific application.
In addition to the processes mentioned, we develop custom furnaces for other thermal processes such as zone melting, synthesis, annealing, etching, degassing, and diffusion processes, as well as customer-specific research and development processes.
Physical Vapor Transport (PVT)
In the PVT process, the starting material is converted into the gas phase through sublimation and then deposited onto a crystal seed. The process is used, among other things, to produce silicon carbide crystals and requires precise control of the temperature gradient as well as stable pressure conditions.
Hydride Vapor Phase Epitaxy (HVPE)
HVPE is used to deposit high-quality semiconductor layers, for example on gallium nitride substrates. The process is characterized by high growth rates and precisely controlled process gas flows.
Solution Growth of Crystals
In solution growth, the crystal grows from a melt or a suitable solution. This method is used when it is not economically or technically feasible to grow materials from the gas phase.
Vertical Gradient Freeze (VGF) / Bridgman Process
In the VGF or Bridgman process, crystal growth occurs within a melt along a defined vertical temperature gradient. Uniform temperature distribution and precise control of the cooling rate are critical to crystal quality.
Discover success stories relating to our systems
Find out how companies use aprotec’s cultivation systems to create optimal conditions for growth and development. The case studies demonstrate how processes can be precisely controlled and individual requirements efficiently met – let them inspire you in your own projects.
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Get Expert Advice
Do you have questions or are you unsure which system is the right fit for your requirements? No problem. We are happy to advise you personally and work with you to find the ideal solution for your application. Benefit from our years of experience, an honest assessment, and professional guidance — tailored to your needs and with no obligation.
Contact person
Michael Landgraf
Managing Director
- m.landgraf@aprotec-gmbh.de
- +49 9353 982460-11